#2n3055 transistor mount iso#
#2n3055 transistor mount series#

Product Specification NPN Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 2070 IC = 4 Adc CollectorEmitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for generalpurpose switching and amplifier applications.

#2n3055 transistor mount iso#

2VCEO = 60V IC = 15A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26Д¬ontinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055HVNPN POWER TRANSISTORTO-3Metal Can PackageSwitching Regulator and Power Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage ( Open Emitter) V100VCEOCollector Emitter Voltage (Open Base) V100VEBOEmitter Base Voltage VД¬ontinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055 NPNSILICON PLANAR POWER TRANSISTORSMJ2955 PNPTO-3Metal Can PackageGeneral Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Collector Emitter Voltage(RBE=100 It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers.TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base Voltage VCBO 100 VCollector-EmД .13. UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case.

2n3055a mj15015 mj15016.pdf Size:89K _onsemiДўN3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Features DC Current Gain - hFE = 20-70 IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) IC = 4 AdcPOWER TRANSISTORS Exc These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dcД .9. Internal schematic dДўN3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistors PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications.

#2n3055 transistor mount series#

It is intendedfor power switching circuits, series and shuntregulators, output stages and high fidelityamplifiers.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-BaseДўN3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. mj2955-2n3055.pdf Size:130K _motorolaДўN3055SILICON NPN TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe 2N3055 is a silicon epitaxial-base NPNtransistor in Jedec TO-3 metal case. designed for general purpose switching and amplifД .4.

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. PowerBase complementary transistors designed

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015.